Publications
Most of Professor Kapoor’s
publications are with his graduate and undergraduate students and industrial
collaborators over the last 20 years.
Biomedical Nanotechnology Research
INVITED TECHNICAL TALKS & SEMINARS: (including Key Note Speaker)
1. |
V.J. Kapoor,
“Nanotechnology for the Brain,” NSF IGERT Sensory Knowledge-Based Interface
Science Program, |
2. |
A. Menezes and V.J. Kapoor,
“Insulated Gate Field Effect Transistors for Biomedical Applications,” The 206th Meeting of the Electrochemical
Society and Electrochemical Society of |
3. |
V.J. Kapoor, A. Vijh, W.J. Levicky, R.L.
Patterson, and J.E. Dickman, “Silicon Dioxide
Insulating Films for Silicon-Germanium Technology,” The Electrochemical
Society Technical Conference, Paris, France, April 25-29 (2003). |
4. |
V.J. Kapoor and A.J. Menezes, “Neurotransistor for
Biomedical Nanotechnology,” The Electrochemical Society Conference, |
5. |
V.J. Kapoor, A. Vijh, R.L. Patterson, and J.E. Dickman,
“Silicon-Germanium Power Devices for Deep-Space Applications,” The NASA
Electronic parts and Packing (NEPP), 02 Conference, Houston, TX, May (2002). |
6. |
V.J. Kapoor, M. Shokrani, C.H. Melkonian, and
J.E. Dickman, “Indium Gallium Arsenide Transistors
for Broadband Microwave Applications”, IEEE 8th International
Symposium on Microwave and Optical Technology, |
7. |
V. J. Kapoor, C.H. Melkonian, T.A. Miller, J.E. Dickman,
and R.L. Patterson, “Low Temperature Space-Borne Power Electronics and
Semiconductor Devices”, the 200th Conference of the
Electrochemical Society, San Francisco, California, September 2-7, 2001. |
8. |
V.J. Kapoor and G. Subramanyam, “High Temperature Superconductor Based
Microwave Phase Shifter Circuits”, IEEE-ISRAMT-95 Conference, |
9. |
V.J. Kapoor, “MNOS Memory
Technology with Oxynitride Thin Films”, Fifth
Biennial Nonvolatile Memory Technology Review
Conference, Lithilum Hts.,
|
10. |
V.J. Kapoor, G. Subramanyam, C.M. Chorey and
K.B. Bhasin, “High Temperature Superconducting Microstrip Ring Resonators Designed for 12 Ghz”, |
11. |
V.J. Kapoor, “InGaAs/InP MW Power Transistors with 0.7 mm Gate Lengths
and 0.2 mm Gate Widths with Output Power Density of 0.74 W/mm at 23 Ghz. Gain and Power-Added Efficiency: 3.2 dB and
27% Respectively. Also S-parameter Measurements”, WOCSEMMAD ‘92
Workshop in |
12. |
V.J. Kapoor, “Review of
Thin Oxynitride Dielectrics for Memory Device
Technology”, J. Electrochemical Society 138 (3), 137C (1991). |
13. |
V.J. Kapoor, “Microwave
and Millimeter Wave Devices Based on Indium Phosphide Compound Semiconductors”, Hewlett Packard, |
14. |
V.J. Kapoor and R.A. Turi, “Review of Silicon Nitride and Oxynitride
Films for Nonvolatile Memory Device Technology”,
174th Meeting of the Electrochemical Society Conference, |
15. |
V.J. Kapoor, “Electrical
and Optical Characterization of Silicon Nitride Films for VLSI Compatible
Memory Devices”, International Conference on Materials and Process
Characterization for VLSI, |
16. |
V.J. Kapoor, “Silcon Oxynitride Materials for
Electrically Erasable ROM’s”, |
17. |
V.J. Kapoor, “Compound
Semiconductor MISFET Technology for High Frequency MMIC’s”,
AT&T Bell Labs, |
18. |
V.J. Kapoor, “InP Devices for High Voltage Power Applications”, General
Electric, |
19. |
V.J. Kapoor, “Compound
Semiconductor Technology for Microwave Digital Integrated Circuits”, Hughes
Aircraft Corporation, |
20. |
V.J. Kapoor, “Plasma
Deposited Germanium Nitride for Compound Semiconductor Technology”, |
21. |
V.J. Kapoor, “Imaging
Charge-Coupled Devices for Space TV Applications”, Rose-Hulman
Institute of Technology, |
22. |
V.J. Kapoor, “Electrically
Erasable MNOS Memory Devices”, Sandia National Laboratories, |
23. |
V.J. Kapoor,
“Semiconductor Technology for Rad Hard VLSI
Processing”, Martin Marietta Aerospace, |
24. |
V.J. Kapoor, “MNOS
Microelectronics for VLSI”, Harris Semiconductor, |
25. |
V.J. Kapoor,
“Microelectronics Technology for Space Power Applications”, |
26. |
V.J. Kapoor, “MNOS Memory
Devices”, |
27. |
V.J. Kapoor,
“Microelectronics in |
28. |
V.J. Kapoor, “Silicon
Nitride for VLSI”, Sandia National Laboratories, |
29. |
V.J. Kapoor, “Origin of
Trapping States in Insulators”, |
30. |
V.J. Kapoor, “Charge
Trapping in Silicon Nitride”, Microelectronics Laboratory, NCR Corporation, |
31. |
V.J. Kapoor, “Need for Nonvolatile MNOS Devices for Microprocessors and Smart
Chips”, Research Laboratory, Fairchild Semiconductor Corporation, |
32. |
V.J. Kapoor, “Devices with
Submicron Features and VLSI Scaling Rules”, |
33. |
V.J. Kapoor, “Solar Cell
Microchip”, Photovoltaics Division, NASA, |
34. |
V.J. Kapoor,
“Defects/Impurities-related Trapping Centers in
Silicon Nitride Material”, Lincoln Laboratory, Massachusetts Institute of
Technology, |
35. |
V.J. Kapoor, “New
Measurement Techniques for MNOS Devices”, The Third IEEE Nonvolatile
Semiconductor Memory Conference, |
36. |
V.J. Kapoor, “Change-Coupled Devices for Imaging”, University of Colorado, Boulder, CO, April 1978. |
|
|
Refereed Publications: (Papers published in archival level
referred journals.)
1. |
G. Xuan, J. Kolodzey, V. Kapoor and G. Gonye, “Characteristics
of FET with Gate Modification by DNA,” Applied Physics Letters 87, 103903
(2005). |
2. |
A. Vijh, V.J. Kapoor, and R. L. Patterson, “Silicon Germanium for Low
Temperature Electronics,” IEEE Proceedings, |
3. |
A.J. Menezes, V.J. Kapoor, V.K. Goel, B.D. Cameron
and J. Lu, “Within a Nanometer of Your Life,”
Mechanical Engineering Magazine, published by ASME, pp. 54-58, August (2001). |
4. |
G. Subramanyam, V.J. Kapoor and K.B. Bhasin, “A
Hybrid Phase Shifter Circuit Based on TPCaBaCuo
Superconducting Thin Films”, IEEE - Transactions on Microwave Theory and
Techniques, 43(3), 566 (1995). |
5. |
V.J. Kapoor, R.A. Turi, D. Xu, and R.S. Bailey,
“MNOS Memory Technology with Oxynitride Thin
Films”, IEEE - Transactions on Components, Packaging and Manufacturing
Technology,” 17(3), 367 (1994). |
6. |
M. Shokrani and V.J. Kapoor, “InGaAs Switch Transistors
for Phase Shifter Circuits”, IEEE - Transactions on Microwave Theory and
Techniques, 42(5), 772 (1994). |
7. |
S. Subramanyam, V.J. Kapoor, C.M. Chorey, and K.B. Bhasin, “Processing Properties of Sputtered
Superconducting Thin Films”, IEEE Transactions on Applied
Superconductivity, 3(1), 1749 (1993). |
8. |
G.A. Johnson and V.J. Kapoor,
“InGaAs Field-Effect Transistors with Submicron
Gates for K-Band Applications” IEEE-Transactions on Microwave Theory
and Techniques, 40(3), 429 (1992). |
9. |
V.J. Kapoor, D. Xu, R.S. Bailey, and R.A. Turi,
“The Combined Effects of Hydrogen and Oxygen Impurities in the Silicon
Nitride Film of MNOS Devices”, Journal of Electrochemical Society, 139(3),
915 (1992). |
10. |
G. Subramanyam, V.J. Kapoor, C.M. Chorey, and K.B. Bhasin, “Electrical-Transport Properties and Microwave
Device-Performance of Sputtered TICaBaCuO
Superconducting Thin Films”, Journal of Applied Physics, 72(6), 2396
(1992). |
11. |
G.A. Johnson, V.J. Kapoor,
M. Shokrani, L.J. Messick,
R. Nguyen, R.A. Stall, and M.A. McKee, “Indium Gallium Arsenide Microwave
Power Transistors”, IEEE Transactions on Microwave Theory and Techniques, 39(7),
1069 (1991). |
12. |
M.D. Biedenbender, V.J. Kapoor, K.A. Shalkhauser, L.J. Messick, R. Nguyen, D. Schmitz, and H. Jurgensen, “A Submicron Gate Indium Phosphide
Power MISFET with Improved Output Power Density at 18 and 20 GHz”, IEEE
Transactions on Microwave Theory and Techniques, 39(8), 1368 (1991). |
13. |
M. Shokrani and V.J. Kapoor, “Silicon Dioxide with a Silicon Interfacial Layer
as an Insulating Gate for Highly Stable Indium Phosphide
MISFETs”, Journal of the Electrochemical Society, 138(6),
1788 (1991). |
14. |
G.A. Johnson and V.J. Kapoor,
“Plasma Deposited Gemanium Nitride Gate Insulators
For Indium Phosphide MISFETs”,
Journal of Applied Physics, 69(6), 3636 (1991). |
15. |
D. Xu and V.J. Kapoor, “Effects of Oxygen Content and Oxide Layer
Thickness on Interface State Densities For Metal-Oxynitride-Silicon
Devices”, Journal of Applied Physics, 70(3), 1570 (1991). |
16. |
M.D. Biedenbender and V.J.
Kapoor, “Chemical Nature of Interface and
Encapsulated Rapid Thermal Annealing for InP MISFETs”, Journal of the Electrochemical Society, 137(5),
1537 (1990). |
17. |
V.J. Kapoor, R.S. Bailey,
and R.A. Turi, “Chemical Composition, Charge
Trapping and Memory of Oxynitride Films for MNOS
Devices”, Journal of the Electrochemical Society, 137(11), 3589
(1990). |
18. |
G. Subramanyam, F. Radpour, and V.J. Kapoor,
“Fabrication of TI-Ca-Ba-Cu-O Superconducting Thin
Films on LaA103 Substrates”, Applied Physics Letters, 56(18),
1799 (1990). |
19. |
G. Subramanyam, F. Radpour, and V.J. Kapoor,
“Fabrication and Chemical Composition of Magnetion Sputtered Ti-Ca-Ba-Cu-O
High Tc Superconducting Thin Films”,
Journal of Applied Physics, 68(3) 1157 (1990). |
20. |
D. Xu and V.J. Kapoor, “ |
21. |
M.D. Biedenbender, V.J. Kapoor, L. Messick, and R. Bguyen, “Ion Implanted High Microwave Power Indium Phosphide Transistors”, IEEE Transactions on Microwave
Theory and Techniques, 37-9, 1321 (1989). |
22. |
A.B. Hoofring and V.J. Kapoor, “Submicron Nickel-Oxide-Gold Tunnel Diode
Detectors for Rectennas”, Journal of Applied
Physics, 66-1, 430 (1989). |
23. |
G.J. Valco, V.J. Kapoor, M.D. Biedenbender and
W.D. Williams, “Plasma Deposited Silicon Nitride for Indium Phosphide Encapsulation”, Journal of the Electrochemical
Society, 136, 175 (1989). |
24. |
D. Xu and V.J. Kapoor, “Photoionization
Cross-Section of Electron Traps in Thin Oxynitride
Films of Metal-Oxynitride-Oxide-Silicon Devices”,
Journal of Applied Physics, 65(3), 1217 (1989). |
25. |
G.J. Valco and V.J. Kapoor, “Plasma Deposited Silicon Nitride for Gallium
Arsenide Encapsulation”, Journal of the Electrochemical Society, 134(2),
820 (1987). |
26. |
M.D. Biedenbender, V.J. Kapoor and W.D. Williams, “Rapid Thermal Annealing of
Indium Phosphide Compound Semiconductors,” Journal
of Vacuum Science and Technology, A5 (4), 1437 (1987). |
27. |
V.J. Kapoor, M.J. Mirtich and B.A. Banks, “Diamond-like Carbon Films on
Semiconductors for Insulated-Gate Technology”, Journal of Vacuum Science and
Technology, A4 (3), 1013 (1986). |
28. |
P.V. Koeppe, V.J. Kapoor, M.J. Mirtich, B.A.
Banks and D.A. Gulino, “Ion Beam Deposited Diamondlike Carbon Coating on Semiconductor”, Journal of
Vacuum Science and Technology, A3(6), 2327 (1985). |
29. |
G.J. Valco and V.J. Kapoor, “Role of GaAs Surface
Cleaning in Plasma Deposition of Silicon Nitride Films for Encapsulated
Annealing”, Journal of Vacuum Science and Technology, A3(3), 1020
(1985). |
30. |
V.J. Kapoor, G.J. Valco, G.G. Skebe, and J.C.
Evan, “High Voltage Solar Cell Chip”, Journal of Applied Physics, 57-4,
1343 (1985). |
31. |
S.B. Bibyk and V.J. Kapoor, “Trapping Kinetics in High Density Silicon
Nitride Insulators”, Journal of Applied Physics, 56(A), 1070 (1984). |
32. |
V.J. Kapoor, R.S. Bailey
and H.J. Stein, “Hydrogen and Silicon Related Memory Traps in Thin Silicon
Nitride Films”, Journal of Vacuum Science and Technology, A1(2), 600
(1983). |
33. |
G.J. Valco and V.J. Kapoor, “Planar Multijunction
High Voltage Solar Cell Chip”, Journal of Applied Physics, 58, November
1982. |
34. |
V.J. Kapoor and J.P. Delatore, “Effects of Oxide Thickness of Charge Trapping
in Metal-Nitride-Semiconductor Structures”, Journal of Applied Physics, 53,
5079 (1982). |
35. |
R.S. Bailey and V.J. Kapoor,
“Variation in the Stoichiometry of Thin Silicon
Nitride Insulating Films on Silicon and its Correlative with Memory Traps”,
Journal of Vacuum Science and Technology, 20, 484 (1982). |
36. |
V.J. Kapoor,
“Charge-Coupled Devices with Submicron Gaps”, IEEE Electron Device Letters,
EDL-2, 99 (1981) |
37. |
S.B. Bibyk and V.J. Kapoor, “Photoionization Cross
Section of Electron Traps in Silicon Nitride Films”, Journal of Applied
Physics, 52, 7313 (1981). |
38. |
V.J. Kapoor, R.S. Bailey
and S.R. Smith, “Impurities-Related Traps in Silicon Nitride Thin Films”,
Journal of Vacuum Science and Technology, 18, 305 (1981). |
39. |
V.J. Kapoor and S.B. Bibyk, “Energy Distribution of Electron Trapping Centers in LPCVD Silicon Nitride Films”, Thin Solid
Films, 78, 193 (1981). |
40. |
V.J. Kapoor and R.A. Turi, “Charge Storage and Distribution in the Nitride
Layer of the MNOS Structures”, Journal of Applied Physics, 52, 311
(1981). |
41. |
V.J. Kapoor, F.J. Feigl and S.R. Butler, “Low Temperature Photocurrent
Spectroscopy of Localized States in SiO2 Films”, Physical Review
Letters, 58, 193 (1977). |
42. |
V.J. Kapoor, F.J. Feigl and S.R. Butler, “Energy and Spatial Distribution
of an |
PAPERS PUBLISHED IN REFEREED PROCEEDINGS:
1. |
V.J. Kapoor, A.J. Menezes, R.L.
Patterson, J.E. Dickman, and A. Hammoud,
“Analog & Digital Electronics for Deep Space Cryogenic Power Systems,”
IMAPS Advanced Technology Workshop Extreme Cold Environments, Pasadena, CA,
Feb. 21-23, 2005. |
2. |
G. Xuan, V.J. Kapoor, J. Kolodzey, and G. Gogye,
“Electrical Effects of DNA Molecules on Silicon Field Effect Transistors,”
2004 IEEE Lester Eastman Conference on High Performance Devices, |
3. |
A.J. Menezes and V.J. Kapoor, “Neurotransistor for
Biomedical Nanotechnology,” Proceeding of Dielectrics in Emerging
Technologies, Volume 2003-01, ISBN# 1-56677-3466, Pages 38-48 (2003). |
4. |
V.J. Kapoor, A. Vijh, W.J. Levicky, R.L.
Patterson, and J. E. Dickman, “Silicon Dioxide
Insulating Films for Silicon-Germanium Technology,” Proceeding of the
International Symposium, Volume 2003-02, ISBN# 1-56677-3474, Library of
Congress Catalogue #2003100710, Pages 217-228 (2003). |
5. |
V.J. Kapoor, M. Shokrani, C.H. Melkonian, and
J.E. Dickman, “Indium Gallium Arsenide Transistors
for Broadband Microwave Applications”, The conference proceedings of the
IEEE-ISMOT ’01, 537 (June 2001). |
6. |
M.A. Smith, V.J. Kapoor,
R. Hickman, and J. VonHove, “Refractory Metal Ohmic Contacts to Gallium Nitride”, III-V
Nitride Materials and Processes, Proceedings volume of the
Electrochemical Society 96-11, 133 (1996). |
7. |
V.J. Kapoor and G. Subramanyam, “High Temperature Superconductor Based
Microwave Phase Shifter Circuits”, Proceedings of the 5th International
Symposium on Recent Advances in Microwave Technology, Proceeding Volume 2,
683 (1995). |
8. |
R. Hickman, V.J. Kapoor,
P.P. Chow, J.E. Dickman and S.A. Alterovitz, “HEMT’s
for Cryogenic Power Applications”, Nondestructive
Wafer Characterization for Compound Semiconductor Materials/ SOTAPOCS XXII,
Proceedings volume of the Electrochemical Society, 95-6, (1995). |
9. |
V.J. Kapoor and M. Shokrani, “Plasma Deposited Insulating Gate Properties
for Compound Semiconductor Technology”, Silicon Nitride and Silicon
Dioxide Thin Insulating Films, Proceedings volume of the Electrochemical
Society, 94-16, 95 (1994). |
10. |
V.J. Kapoor, M. Shokrani, and G.A. Johnson,” Insulating Gate Properties
and Electron Beam Induced Damage for Stable InGaAs/InP
MISFETS Technology”, Silicon Nitride and Silicon Dioxide Thin Insulating
Films III, Proceedings volume of the Electrochemical Society, 94-5
(1994). |
11. |
M. Shokrani and V.J. Kapoor, “Switch Transistors for Microwave Control
Applications”, Conference proceedings of Indium Phosphide
and Related Materials Conference IEEE Catalog #93,
Library of Congress #393, (1993). |
12. |
M. Shokrani and V.J. Kapoor, “InGaAs Insulated Gate
Transistors for Microwave Frequency Applications”, SOTAPOCS XVIII Proceedings
Volume of the Electrochemical Society, (1993). |
13. |
V.J. Kapoor, “MNOS Memory
Technology”, Proceedings of the 1993 Nonvolatile
Memory Technology Conference, IEEE catalog
#93TH0547-0, Library of Congress #93-778 37, 3 (1993). |
14. |
G. Subramanyam and V.J Kapoor, “TI-Ca-Ba-Cu-O
Superconducting Thin Films for Hybrid Microwave Circuits”, Low Temperature
Electronics and High Temperature Superconductivity, Proceedings volume of the
Electrochemical Society, NJ, (1993). |
15. |
G.A. Johnson, M.D. Biedenbender,
V.J. Kapoor, L.J. Messick,
R. Ngugen, D. Schmitz, and H. Jurgenson,
“Submicron Gate Microwave Power Transistors”, Conference proceedings on
Indium Phosphide and Related Materials, IEEE Catalog #91CH2950-4, Library of Congress #90-85247, 423
(1991). |
16. |
G.A. Johnson and V.J. Kapoor,
“High Frequency Transistors and MOCVD Grown InGaAs/InP”,
Conference proceedings on Indium Phosphide and
Related Materials, IEEE Catalog #90CH2859-7,
Library of Congress, #90-80596, 304 (1990). |
17. |
M. Shokrani and V.J. Kapoor, “Silicon Dioxide with Silicon Interfacial Layer
for Gate Dielectric in MISFETs on Indium Phosphide”, Ion Implantation and Dielectrics for
Compound Semiconductors, Proceedings volume of the Electrochemical
Society, NJ (1990). |
18. |
M.D. Biedenbender and V.J.
Kapoor, “Chemical Nature of Interface and
Encapsulated Rapid Thermal Annealing for InP MISFETs”, SPIE Proceedings Volume 1144, 208
(1989). |
19. |
Dan Xu and V.J. Kapoor, “Characterization of Electrical Properties of
Hydrogen Rich Silicon Nitride Films for MNOS Devices”, Silicon Nitride and
Silicon Dioxide Thin Insulating Films, Proceedings Volume of the
Electrochemical Society, 89-7, 107 (1989). |
20. |
V.J. Kapoor and R.A. Turi (Invited) “Review of Oxynitride
Films for Non-Volatile Memory Device Technology”, Silicon Nitride and
Silicon Dioxide Thin Insulating Films, Proceedings Volume of the
Electrochemical Society, 89-7, (1989). |
21. |
D.M. Pantic and V.J. Kapoor, “Electron-Beam Induced Damage in PECVD Si3N4
and SiO2 Films on InP”, Proceedings of
the Electrochemical Society, |
22. |
P.G. Young and V.J. Kapoor,
“Silicon Nitride and Silicon Dioxide Films for MISFETs
on Indium Phosphide”, Dielectric Films on Compound
Semiconductors, Journal of the Electrochemical Society, |
23. |
M.D. Biedenbender and V.J.
Kapoor, “Rapid Thermal Annealing of Ion Implanted Phosphide”, Proceedings of the Electrochemical Society,
Pennington, NJ, 88-15, 103 (1988). |
24. |
G.A. Johnson and V.J. Kapoor,
“Plasma Deposited Germanium Nitride on InP Compound
Semiconductors”, Dielectric Films on Compound Semiconductors, Journal of the
Electrochemical Society, Pennington, NJ, 88-15, 57 (1988). |
25. |
D. Xu and V.J. Kapoor, “Cross-Section of Electron Traps in Thin LPCVD
films”, Proceedings of the Electrochemical Society, |
26. |
G.J. Valco and V.J. Kapoor, “Encapsulated Annealing of Ion-Implanted GaAs Substrates”, Silicon Nitride and Silicon Dioxide
Thin Insulating Films, Proceedings of the Electrochemical Society,
Pennington, NJ 87-10, 515 (1987). |
27. |
G.J. Valco, M.D. Biedenbender, G.A. Johnson, V.J. Kapoor
and W.D. Williams, “Encapsulated Annealing of InP Substrated”, Proceedings of the Electrochemical Society, |
28. |
P.V. Koeppe and V.J. Kapoor, “Modeling of Two-Phase CCD’s with Submicron Gaps in InP
Substrates”, Dielectric Films on Compound Semiconductors, Proceedings of the
Electrochemical Society, Pennington, NJ 86-3, 47 (1986). |
29. |
D.C. Liu, G.J. Valco, G.G.
Skebe and V.J. Kapoor, “Plasma
Deposited Nitride Films on GaAs and InP, Proceedings of the Electrochemical Society, |
30. |
S.B. Bibyk and V.J. Kapoor, “Trapping Kinetics in Insulators Having a High
Charge Capture Probability”, Proceedings of the Electrochemical Society, |
31. |
G.J. Valco and V.J. Kapoor, “Plasma Deposition of Silicon Nitride Films for
Encapsulated Annealing of Implanted GaAs”, Silicon
Nitride Thin Insulating Films, Proceedings of the Electrochemical Society,
Pennington, NJ 83-8, 128 (1983). |
32. |
G.J. Valco and V.J. Kapoor, “Multijunction High
Voltage Concentrator Solar Cells”, Proceedings of the Intersociety Energy Conversion
Engineering, 2, 1649 (1981). |
33. |
G.J. Valco, V.J. Kapoor and A. Chai,
“Fabrication of Multijunction High Voltage
Concentrator Solar Cells by Integrated Circuit Technology, Proceedings of the
Fifteenth IEEE Photovoltaic Specialist, 15, 187 (1981). |
34. |
V.J. Kapoor and S.B. Bibyk, “Spatial and Energy Distribution of Electric
Trapping Defects in the Thick-Oxide MNOS Structure”, The Physics of MOS
Insulators, edited by S.T. Pantelides, Pergammon Press, New York, NY (1980). |
35. |
F.J. Feigl, D.J. DiMaria and V.J. Kapoor, “Photodepopulation Spectroscopy in MIS Insulators”, Thermal
and Photostimulated Currents in Insulators,
Proceedings Volume, ECS, 76, 35 (1976). |
36. |
V.J. Kapoor, F.J. Feigl and S.R. Butler, “Energy and Spatial Distribution of Electron Trapping Devices in the MNOS Insulator”, Thermal and Photostimulated Currents in Insulators, Proceedings Volume ECS, 76, 35, (1976). |
Dr. Kapoor’s Students
Conference PublicationS: (partial listing)
1. |
Y.J. Chen,
R. Rogers and V.J. Kapoor, “Information Transfer
Between Pulmonary Stretch Receptors and Pump Cells in the Respiratory Control
System,” Interface, Volume 12, No. 3, PS-10 (2003). |
2. |
V.J. Kapoor, A. Menezes, A. Vijh, and R.
Patterson, “Analog Power and Digital Circuits at
Cryogenic Temperatures,” Interface, Volume 12, No. 3, PS-49 (2003). |
3. |
A. Menezes and V.J. Kapoor, “Insulated Gate Field Effect Transistors For Cell
Culture Media,” Interface, Volume 12, No. 3, PS-25 (2003). |
4. |
V.J. Kapoor, A. Vijh, W.J. Levicky, R.L.
Patterson, and J.E. Dickman, “Silicon Dioxide
Insulating Films for Silicon-Germanium Technology,” The Electrochemical
Society Technical Conference, Paris, France, April 25-29 (2003). |
5. |
A.J. Menezes, V.J. Kapoor, L. Smith, M. Komisarek,
R. Oberst, and S.C. Molitor,
“Neuroelectronic MEMS,” Proceedings of the 201st
meeting of the Electrochemical Society, Philadelphia, PA, May 12-17 (2002). |
6. |
A. Vijh and V.J. Kapoor, “P- and n-channel SiGe MOSFETs for Space Systems,” Proceedings of the 201st
meeting of the Electrochemical Society, |
7. |
C.H. Melkonian, D. Bernardon, V.J. Kapoor, J.E. Dickman, and R.L. Patterson, “Compound Semiconductor
Devices for Space-Borne Power Electronic Systems”, The Electrochemical
Society Conference, San Francisco, California, September 2-7, 2001. |
8. |
C.H. Melkonian and V.J. Kapoor, “InGaAs/InP MISFET for
Cryogenic DC Switching Applications”, the meeting of the Electrochemical
Society, |
9. |
C.H. Melkonian and V.J. Kapoor, “Fabrication of an InGaAs
MISFET”, the meeting of the Electrochemical Society, |
10. |
M.A. Smith, M.R. Kobylak,
and V.J. Kapoor, “Fabrication and Characterization
of Vacuum Microelectronic Devices”, The Electrochemical Society Interface, 5(1),
1996, The Electrochemical Society Meeting, |
11. |
M.A. Smith and V.J. Kapoor,
“An Investigation of Refractory Metal Ohmic
Contacts to Gallium Nitride”, The Electrochemical Society Interface, 5(1),
1996, The Electrochemical Society Meeting, |
12. |
R. Hickman, V.J. Kapoor,
J.E. Dickman, and S.A. Altrovitz,
“Fabrication Processes for InAlAs/InP HEMT’S”, The
Electrochemical Society Interface, 4(1), 172 (1995). |
13. |
M.R. Kobylak, J.V. Smith,
V.J. Kapoor, and V. Heinen,
“Vacuum Microelectronic Diode for Space Electronics Application”, The
Electrochemical Society Interface, 4(1), 172 (1995). |
14. |
R. Hickman, V.J. Kapoor,
P.O. Chow, J.E. Dickman, and S.A. Alterovitz, “InAlAs/InP HEMT’S
for Cryogenic Power Applications”, The Electrochemical Society Interface, 4(1),
173 (1995). |
15. |
V.J. Kapoor, M. Shokrani and G.A. Johnson, “Si02/Si Insulating
Gate Properties and Electron-Beam Induced Damage for Stable InGaAs/InP MISFET Technology”, The Electrochemical
Society Interface, 3(1), 125 (1994). |
16. |
V.J. Kapoor, R. Hickman
and G. Subramanyam, “Thallium-superconductor Indium
Phosphide semiconductor Hybrid Phase Shifter Low
Temperature Electronics at Microwave Frequencies”, presented at the First European
Workshop on Low Temperature Electronics, |
17. |
R. Hickman, V.J. Kapoor,
P.W. Yu, “Eqitaxial Growth of InGaAs
by LP-MOCVD Under Highly Stable Reaction Chamber Conditions”, The
Electrochemical Society Interface, 3(3), 155 (1994). |
18. |
R. Hickman and V.J. Kapoor,
“High Electron Mobility Transistors Grown by LP-MOCVD with P+ InGaAs Gate Layer”, The Electrochemical Society Meeting, |
19. |
W.S. Gaines and V.J. Kapoor,
“InAlAs/InGaAs High Electron Mobility Transistor
for MMIC Applications”, The Electrochemical Society Meeting, |
20. |
Shokrani
and V.J. Kapoor, “InGaAs
Switch Transistors for Microwave Control Applications”, Fifth International
Conference on Indium Phosphide and Related
Materials, |
21. |
G. Subramanyam and V.J. Kapoor, “TICaBaCuO
Superconducting Thin Films for Hybrid Microwave Phase Shifter Circuits”, The
183rd Meeting of the Electrochemical Society, |
22. |
K.B. Bhasin, S.S. Toncich, R.R. Romanofsky, C.M. Chorey, N. Roher, G. Valco, and V.J. Kapoor,
“High Tc Superconducting/Semiconducting
Hybrid Microwave Circuits and Applications”, The Electrochemical Society
Meeting, |
23. |
M. Shokrani and V.J. Kapoor, “InGaAs Insulated Gate
Transistors for Microwave Frequency Applications”, The Electrochemical Society
Interface, 285 (1993). |
24. |
G. Subramanyam, V.J. Kapoor, C.M. Chorey, and K.B. Bhasin, “Microwave Properties of Sputtered
Superconducting Thin Films”, Applied Superconductivity Conference, |
25. |
J.J. Nahra, K.B. Bhasin, G. Subramanyam, S.S. Toncich, and V.J. Kapoor,
“C-Band Superconductor-Semiconductor Hybrid Field-Effect Transistor
Amplifier”, Applied Superconductivity Conference, Chicago, Illinois, August
23-28, (1992). |
26. |
G.A. Johnson and V.J. Kapoor,
“Indium Gallium Arsenide Microwave Power Transistors”,
1991 IEEE-MTT International Microwave Symposium, Boston, Massachusetts, June
10-14, 1991. This paper was awarded the First Prize in the IEEE
conference for the student paper competition (Greg Johnson - Ph.D. student). |
27. |
G.A. Johnson, M.D. Biedenbender,
V.J. Kapoor. L.J. Messick,
R. Nguyen, D. Schmitz, and H. Jurgensen, “InGaAs/InP Submicron Gate Microwave Power Transistors for
20 GHz Applications”, Third International Conference on Indium Phosphide and Related Materials, Cardiff, Wales, UK,
April 8-11, 1991, sponsored by IEEE Electron Devices/Laser Societies. |
28. |
G. Subramanyam, V.J. Kapoor and G.H. Lemon, “Processing of TICaBa
CuO Superconducting Thin Films for Passive
Microwave Devices”, The Journal of the Electrochemical Society, 138(4),
222C (1991). |
29. |
G.A. Johnson and V.J. Kapoor,
“Microwave Power Indium Gallium Arsenide Transistors”,
Bull. Am. Phy. Soc., 36(3), 985 (1991). |
30. |
M.D. Biedenbender and V.J.
Kapoor, “High Microwave Output Power Density
Submicron Gate InP Transistors”, Bull. Am. Phy. Soc., 36(3), 987 (1991). |
31. |
M. Shokrani and V.J. Kapoor, “Role of Thin Silicon Interfacial Layer on the
Chemical and the Electrical Properties of the Silicon Dioxide Gate Insulators
for InP Power MISFETs”,
Bull. Am. Phy. Soc., 36(3), 986 (1991). |
32. |
G. Subramanyam and V.J. Kapoor, “Processing of High Tc
and High Jc Superconducting Films”,
Bull. Am. Phy. Soc., 36(3), 519 (1991). |
33. |
F. Radpour, G. Subramanyam and V.J. Kapoor,
“Fabrication and Characterization of TI-Ca-Ba-Cu-O
Superconducting Thin Films on SrTiO3 and
LaAlO3 Substrates”, 177th Meeting of the Electrochemical
Society, |
34. |
G.A. Johnson and V.J. Kapoor,
“High Frequency Submicron Transistors on MOCVD Grown In GaAs/InP”,
Second International Conference on Indium Phosphide
and Related Materials, |
35. |
D. Xu and V.J. Kapoor, “The Effects of Hydrogen Impurity on Thin Silicon
Nitride Films on MNOS Devices”, Journal of the Electrochemical Society, 137(8),
391C (1990). |
36. |
M. Shokrani, M.D. Biedenbender, V.J. Kapoor, and
F. Radpour, “High Microwave Power InP MISFETs with One Micron and
Submicron Gates”, Second International Conference on Indium Phosphide and Related Materials, |
37. |
G. Subramanyam, F. Radpour, V.J. Kapoor, and G.H.
Lemon, “Disposition and Patterning of Thallium Superconducting Thin
Films”, SPIE Technical Symposium on Optical Engineering and Photonics, |
38. |
G. Subramanyam, F. Radpour, V.J. Kapoor, and G.H.
Lemon, “Magnetron Sputtered TICaBaCuo
Superconducting Thin Films for Passive Microwave Devices”, SPIE Symposium on
Advances in Semiconductors and Superconductors, San Diego, California,
March
17-21, (1990). |
39. |
G.A. Johnson and V.J. Kapoor,
“Dielectric Films on InGaAs Substrates”, 176th
Meeting of the Electrochemical Society, Hollywood, CA, October 15, 1989, J.
Chem. Society, 136(8), 385 C (1989). |
40. |
M. Shokrani and V.J. Kapoor, “Gate Dielectric with Silicon Interfacial Layer
on Indium Phosphide”, The Journal of the
Electrochemical Society, 136(8), 385 C (1989). |
41. |
M.D. Biedenbender and V.J.
Kapoor, “Self Aligned Gate Technology for InP MISFETs”, First
International Conference on Indium Phosphide for
Advanced Electronic and Optical Devices, |
42. |
V.J. Kapoor, M.D. Biedenbender and G.A. Johnson, “Encapsulated Rapid
Thermal Annealing and Thin Gate Dielectrics for InP
MISFETs”, InP Microwave/Millimeter Wave Technology Workshop, NOSC, |
43. |
A.B. Hoofring and V.J. Kapoor, “Fabrication and Characterization of Far Infrared
Submicron Rectenna Devices”, The Journal of the
Electrochemical Society, 135(8), 377C (1988). |
44. |
D. Xu and V.J. Kapoor, “Characterization of Electrical Properties of
Oxygen/Hydrogen Rich Silicon Nitride Films for MNOS Devices”, The Journal of
the Electrochemical Society, 135(8), 361C (1988). |
45. |
V.J. Kapoor, M.D. Biedenbender and P.G. Young, “Rapid Thermal Annealing and
Self Aligned Gate Processing for Ion Implanted Indium Phosphide
MISFETs”, 1988 International Electronic Devices and
Materials Symposium, |
46. |
D.M. Pantic, W.D.
Williams, J.E. Dickman, P.G. Young, M.D. Biedenbender, and V.J. Kapoor,
“Electron Beam Induced Damage in Silicon Nitride Films on InP”,
172nd Meeting of the Electrochemical Society, Honolulu, Hawaii, October
18-23, 1987. |
47. |
P. Young, V.J. Kapoor and
W.D. Williams, “Silicon Nitride and Silicon Dioxide Films for MISFETs on Indium Phosphide”,
172nd Meeting of the Electrochemical Society, |
48. |
M.D. Biedenbender, V.J. Kapoor, D. Xu, and W.D. Williams,
“Rapid Thermal Annealing of Ion Implanted Indium Phosphide”,
172nd Meeting of the Electrochemical Society, |
49. |
G.A. Johnson, V.J. Kapoor
and P.G. Young, “Plasma Deposited Germanium Nitride for Indium Phosphide”, 172nd Meeting of the Electrochemical Society,
|
50. |
D. Xu and V.J. Kapoor, “Photoionization
Cross-Section of Thin LPCVD Oxynitride Films in
MNOS Structures”, The Electrochemical Society Meeting, |
51. |
M.D. Biedenbender, V.J. Kapoor and W.D. Williams, “Rapid Thermal Annealing of
Indium Phosphide Compound Semiconductors”, 33rd
National Symposium of the American Vacuum Society, |
52. |
G.A. Johnson, V.J. Kapoor
and D.A. Gulino, “Plasma Deposited Germanium
Nitride on InP Compound Semiconductor”, 33rd
National Symposium of the American Vacuum Society, |
53. |
W.D. Williams, J.E. Dickman,
J. Warner, G. Warner, G.J. Valco, and V.J. Kapoor, “Electron Beam Induced Damage in GaAs”, Third North Coast Symposium of American Vacuum
Society, Ohio Chapter, June 2, 1986. |
54. |
M.D. Biedenbender and V.J.
Kapoor, “Surface Characterization for Capless Rapid Thermal Annealing of Ion Implanted Indium Phosphide”, Workshop on Dielectric Systems for Compound
Semiconductors, |
55. |
V.J. Kapoor, M.J. Mirtich and B.A. Banks, “Diamondlike
Carbon Films on Compound Semiconductors for Insulated-Gate Technology”, 32nd
National American Vacuum Society Symposium, |
56. |
G.J. Valco and V.J. Kapoor, “InP MISFETs with Ge3N4/BN Gate
Insulators”, J. Electrochemical Society, 132, 349C (1985). |
57. |
P.V. Koeppe and V.J. Kapoor, “Modeling of Two-Phase CCDs with Various Gate Dielectrics on InP
Substrates”, J. Electrochemical Society, 132, 348C (1985). |
58. |
T. Burnett, W.D. Williams, J.E. Dickman,
G.J. Valco, and V.J. Kapoor,
“Electron Beam Induced Damage in Semiconductors” |
59. |
V.J. Kapoor, J.L. Eismann, J.A. Topich, and R.A. Turi, “Effects on Oxygen on Charge Trapping in LPCVD
Silicon Nitride Insulator of an MNOS Device”, J. Electrochemical Society, 132,
97C (1985). |
60. |
V.J. Kapoor, P.V. Koeppe, M.J. Mirtich, B.A.
Banks, and D.A. Gulino, “Characterization of Ion
Beam Deposited Diamondlike Carbon Coating on
Semiconductors”, International Conference on Metallurgical Coating, |
61. |
V.J. Kapoor, J.L. Eismann, J.A. Topich, and R.A. Turi, “Role of Electron and Hole Traps on the Memory
Properties of MNOS Devices”, 7th IEEE Nonvolatile
Semiconductor Memory Workshop, San Diego, CA, March 11-13, 1985. |
62. |
G.J. Valco and V.J. Kapoor, “Role of GaAs Surface
Cleaning of Encapsulated Annealing”, 31st National American Vacuum Society
Symposium, Reno, NV, December 9-12, 1984. |
63. |
V.J. Kapoor and G.J. Valco, “Silicon Nitride for Annealing GaAs:
Part II”, The Electrochemical Society Meeting, |
64. |
G.J. Valco, V.J. Kapoor and J.E. Dickman,
“Plasma Reactor Cleaning and Plasma Damage in GaAs,
Part I”, The Electrochemical Society Meeting, |
65. |
R.S. Bailey, V.J. Kapoor,
and J.A. Topich, “The Effects of LPCVD Silicon
Nitride Composition on the Memory Properties of MNOS Structures”, 1983 Nonvolatile Semiconductor Memory Workshop, Vail, CO,
August 17, 1983. |
66. |
D.C. Liu and V.J. Kapoor,
“Plasma Deposited Nitride Films on GaAs and InP”, The Electrochemical Society Meeting, |
67. |
G.J. Valco and V.J. Kapoor, “Plasma Deposition of Silicon Nitride and Boron
Nitride Films for Encapsulated Annealing of Implanted GaAs”,
The Electrochemical Society Meeting, 1303), 78C (1983); |
68. |
S.B. Bibyk and V.J. Kapoor, “Trapping Kinetics in Insulators Having a High
Charge Capture Probability”, The Electrochemical Society Meeting, |
69. |
D.C. Liu and V.J. Kapoor,
“Passivation of GaAs with
Boron Nitride”, IEEE Workshop on Dielectric System for III-V Compounds, |
70. |
R.G. Byrnes and V.J. Kapoor,
“Finite Element Modeling of Submicron Geometry
Charge-Coupled Devices”, Joing |
71. |
V.J. Kapoor and R.S.
Bailey, “Hydrogen Related Memory Traps in Nitride Films”, 29th National
Vacuum Symposium, |
72. |
G.J. Valco and V.J. Kapoor, “PMJ Solar Cell Chips”, Bull. Amer. Phys. Society
Meeting, April, 1982. |
73. |
R.J. Meara and V.J. Kapoor, “Minority Carrier Lifetime Studies in PMJ Solar
Cell Chips”, Am. Phys. Society., 27, 462 (1982). |
74. |
G.M. West, C.F. Kilb and
V.J. Kapoor, “Fabrication of a Single Level Polysilicon Gate CDD with Submicron Inter-electrode
Gaps”, J. Electrochemical Society, 129, 330C (1982). |
75. |
R.G. Byrnes and V.J. Kapoor,
“Finite Element Modeling of Submicron Geometry
Charge-Coupled Devices” Bull. Amer. Phys. Society, 27, 461 (1982). |
76. |
V.J. Kapoor and J.P. Delatore, “Trapped Charge Density in Silicon Nitride
Films vs. Silicon Dioxide Thickness”, Bull. Amer. Phys. Society, (April,
1982). |
77. |
V.J. Kapoor and H.J.
Stein, “Origin of Electron Traps in CVD Silicon Nitride Films”, 1982 Nonvolatile Semiconductor Memory Workshop, Monterey, CA,
March 7, 1982. |
78. |
G.J. Valco and V.J. Kapoor, “High Voltage Concentrator Solar Cells”, Bull.
Amer. Phys. Society Meeting, |
79. |
R.G. Byrnes and V.J. Kapoor,
“Modeling of Submicron Charge-Coupled Devices”,
Bull. Amer. Phys. Society, 26, 618 (1981). |
80. |
H.J. Stein and V.J. Kapoor,
“Electron Trap Densities and Chemical Composition of APCVD Silicon Nitride”,
The Electrochemical Society, 160th Meeting, Denver, CO, October 11-16, 1981. |
81. |
R.S. Bailey and V.J. Kapoor,
“Analysis of MNOS Structures by AES”, The Electrochemical Society, 160th
Meeting, Denver, CO, October 11-16, 1981. |
82. |
S.B. Bibyk, V.J. Kapoor, and R.A. Turi,
“Optically Programmable Nonvolatile MNOS Memory
Devices”, Digest of Technical Papers of the CECON Electronics Conferences,
Cleveland, OH, May 1980 (IEEE, New York). |
83. |
Salmi,
V.J. Kapoor, G.M. West, and D. Jones, “Dark Current
Nonuniformity of ImagingCharge-Coupled
Devices”, Digest of Technical Papers of the 26th CECON Electronic Conference,
|
84. |
V.J. Kapoor and R.S.
Bailey, “Chemical Nature of Si3N4 Films”, 27th National
American Vacuum Society Symposium, October 14-17, 1980. |
85. |
V.J. Kapoor, “Energy
Distribution of Trapping Defects in the Silicon Nitride Insulator”, J.
Electrochemical Society, 127, 377 (1980). |
86. |
S.B. Bibly and V.J. Kapoor, “Photocurrent Spectroscopy on the Thick-Oxide
MNOS Devices”, Bull. Amer. Phys. Society, 25, 313 (1980). |
87. |
V.J. Kapoor and S.B. Bibyk, “Spatial and Energy Distribution of Electron
Trapping Defects in the Thick-Oxide MNOS Structure”, International Tropical
Conference on the Physics of MOS Insulators, |
88. |
R.S. Bailey, S.R. Smith and V.J. Kapoor,
“Auger Depth Profiling of Thick-Oxide MNOS Devices”, Bull. Amer. Phys.
Society, 25, (March 1980). |
89. |
V.J. Kapoor and W. Morris,
“Electronic Charge Trapping in Thick Oxide MNOS Devices”, Bull. Amer. Phys.
Society, 25, 313 (1980). |
90. |
A.V. Kordesh, V.J. Kapoor and W.H. Ko, “Energy
Distribution in Memory Traps in the MNOS Structures”, Bull. Amer. Phys.
Society, 24, 496 (1979). |
91. |
G.J. Valco and V.J. Kapoor, “Carrier Generation in Charge-Coupled Devices in
the Dark”, Bull. Amer. Phys. Society, 24, (March 1979). |
92. |
V.J. Kapoor, R.A. Turi and W.H. Ko, “Charge
Storage in the Nitride Layer of a Biased MNOS Device”, Bull. Amer. Phys.
Society, 24, 496 (1979). |
93. |
V.J. Kapoor, “Electronic
Charge Trapping in MNOS Structure”, Bull. Amer. Phys. Society, 22, 407
(1977). |
94. |
V.J. Kapoor, “Low
Temperature Photocurrent Spectroscopy on the MOS Oxide”, Bull. Amer. Phys.
Society, 21, 589 (1976). |
95. |
V.J. Kapoor and F.J. Feigi, “Photocurrent Spectroscopy on the MOS Insulator”,
Bull. Amer. Phys. Society, 21, 1315 (1976). |
96. |
V.J. Kapoor and F.J. Feigi, “Photodepopulation
Spectroscopy in MIS Insulator”, Journal of the Electrochemical Society, 122,
232C (1975). |
97. |
V.J. Kapoor, F.J. Feigl and S.R. Butler, “Spatial Distribution of Electron Trapping in MOS”, Journal of the Electrochemical Society, 122, 250C (1975). |