Publications

 

Most of Professor Kapoor’s publications are with his graduate and undergraduate students and industrial collaborators over the last 20 years.

 

INVITED TECHNICAL TALKS & SEMINARS: (including Key Note Speaker)

 

1. V.J. Kapoor, A. Vijh, W.J. Levicky, R.L. Patterson, and J.E. Dickman, “Silicon Dioxide Insulating Films for Silicon-Germanium Technology,” The Electrochemical Society Technical Conference, Paris, France, April 25-29 (2003).
 
2. V.J. Kapoor and A.J. Menezes, “Neurotransistor for Biomedical Nanotechnology,” The Electrochemical Society Conference, Paris, France, April 25-29 (2003).
 
3. V.J. Kapoor, A. Vijh, R.L. Patterson, and J.E. Dickman, “Silicon-Germanium Power Devices for Deep-Space Applications,” The NASA Electronic parts and Packing (NEPP), 02 Conference, Houston, TX, May (2002).
 
4. V.J. Kapoor, M. Shokrani, C.H. Melkonian, and J.E. Dickman, “Indium Gallium Arsenide Transistors for Broadband Microwave Applications”, IEEE 8th International Symposium on Microwave and Optical Technology, Montreal, Canada, June 20-24, 2001.
 
5. V. J. Kapoor, C.H. Melkonian, T.A. Miller, J.E. Dickman, and R.L. Patterson, “Low Temperature Space-Borne Power Electronics and Semiconductor Devices”, the 200th Conference of the Electrochemical Society, San Francisco, California, September 2-7, 2001.
 
6. V.J. Kapoor and G. Subramanyam, “High Temperature Superconductor Based Microwave Phase Shifter Circuits”, IEEE-ISRAMT-95 Conference, Kiev, Ukraine, September 11-16, 1995.
 
7. V.J. Kapoor, “MNOS Memory Technology with Oxynitride Thin Films”, Fifth Biennial Nonvolatile Memory Technology Review Conference, Lithilum Hts., Maryland, June 22, 1993.
 
8. V.J. Kapoor, G. Subramanyam, C.M. Chorey and K.B. Bhasin, “High Temperature Superconducting Microstrip Ring Resonators Designed for 12 Ghz”, Third World Congress on Superconductivity, Munich, Germany, September, 1992.
 
9. V.J. Kapoor, “InGaAs/InP MW Power Transistors with 0.7 mm Gate Lengths and 0.2 mm Gate Widths with Output Power Density of 0.74 W/mm at 23 Ghz.  Gain and Power-Added Efficiency: 3.2 dB and 27% Respectively.  Also S-parameter Measurements”, WOCSEMMAD ‘92 Workshop in San Antonio, TX, February 1992.
 
10. V.J. Kapoor, “Review of Thin Oxynitride Dielectrics for Memory Device Technology”, J. Electrochemical Society 138 (3), 137C (1991).
 
11. V.J. Kapoor, “Microwave and Millimeter Wave Devices Based on Indium Phosphide Compound Semiconductors”, Hewlett Packard, Palo Alto, CA, April 1989.
 
12. V.J. Kapoor and R.A. Turi, “Review of Silicon Nitride and Oxynitride Films for Nonvolatile Memory Device Technology”, 174th Meeting of the Electrochemical Society Conference, Chicago, IL, October 9-14, 1988.
 
13. V.J. Kapoor, “Electrical and Optical Characterization of Silicon Nitride Films for VLSI Compatible Memory Devices”, International Conference on Materials and Process Characterization for VLSI, Shanghai, China, October 23-28, 1988.
 
14. V.J. Kapoor, “Silcon Oxynitride Materials for Electrically Erasable ROM’s”, SeeQ Technology, California, March, 1987.
 
15. V.J. Kapoor, “Compound Semiconductor MISFET Technology for High Frequency MMIC’s”, AT&T Bell Labs, Murray Hill, NJ, January 1987.
 
16. V.J. Kapoor, “InP Devices for High Voltage Power Applications”, General Electric, Syracuse, NY, August 1986.
 
17. V.J. Kapoor, “Compound Semiconductor Technology for Microwave Digital Integrated Circuits”, Hughes Aircraft Corporation, California, May 1986.
 
18. V.J. Kapoor, “Plasma Deposited Germanium Nitride for Compound Semiconductor Technology”, NASA-Lewis Research Center, Cleveland, OH, March 1986.
 
19. V.J. Kapoor, “Imaging Charge-Coupled Devices for Space TV Applications”, Rose-Hulman Institute of Technology, Terre Haute, IN, October 2, 1985.
 
20. V.J. Kapoor, “Electrically Erasable MNOS Memory Devices”, Sandia National Laboratories, Albuquerque, New Mexico, March 22, 1985.
 
21. V.J. Kapoor, “Semiconductor Technology for Rad Hard VLSI Processing”, Martin Marietta Aerospace, Orlando, FL, August 4, 1985.
 
22. V.J. Kapoor, “MNOS Microelectronics for VLSI”, Harris Semiconductor, Melbourne, FL, January 7, 1985.
 
23. V.J. Kapoor, “Microelectronics Technology for Space Power Applications”, NASA-Lewis Research Center, Cleveland, OH, September 10, 1984.
 
24. V.J. Kapoor, “MNOS Memory Devices”, Ohio State University, Columbus, OH, April 5, 1984.
 
25. V.J. Kapoor, “Microelectronics in Ohio”, - CECON “83 Electronic Conference, Cleveland, OH, October 1983 (published by IEEE, New York).
 
26. V.J. Kapoor, “Silicon Nitride for VLSI”, Sandia National Laboratories, Albuquerque, New Mexico, January 10, 1983.
 
27. V.J. Kapoor, “Origin of Trapping States in Insulators”, University of Cincinnati, Cincinnati, OH, January 6, 1983.
 
28. V.J. Kapoor, “Charge Trapping in Silicon Nitride”, Microelectronics Laboratory, NCR Corporation, Dayton, OH, July 1982.
 
29. V.J. Kapoor, “Need for Nonvolatile MNOS Devices for Microprocessors and Smart Chips”, Research Laboratory, Fairchild Semiconductor Corporation, Palo Alto, CA, March 1982.
 
30. V.J. Kapoor, “Devices with Submicron Features and VLSI Scaling Rules”, Stanford University, Palo Alto, CA, March, 1982.
 
31. V.J. Kapoor, “Solar Cell Microchip”, Photovoltaics Division, NASA, Cleveland, OH, April, 1981.
 
32. V.J. Kapoor, “Defects/Impurities-related Trapping Centers in Silicon Nitride Material”, Lincoln Laboratory, Massachusetts Institute of Technology, Boston, Mass., May, 1980.
 
33. V.J. Kapoor, “New Measurement Techniques for MNOS Devices”, The Third IEEE Nonvolatile Semiconductor Memory Conference, Santa Cruz, CA, March, 1979.
 
34. V.J. Kapoor, “Change-Coupled Devices for Imaging”, University of Colorado, Boulder, CO, April 1978.

 

Refereed Publications:  (Papers published in archival level referred journals.)

1. A. Vijh, V.J. Kapoor, and R. L. Patterson, “Silicon Germanium for Low Temperature Electronics,” IEEE Proceedings, New York, May (2002).
 
2. A.J. Menezes, V.J. Kapoor, V.K. Goel, B.D. Cameron and J. Lu, “Within a Nanometer of Your Life,” Mechanical Engineering Magazine, published by ASME, pp. 54-58, August (2001).
 
3. G. Subramanyam, V.J. Kapoor and K.B. Bhasin, “A Hybrid Phase Shifter Circuit Based on TPCaBaCuo Superconducting Thin Films”, IEEE - Transactions on Microwave Theory and Techniques, 43(3), 566 (1995).
 
4. V.J. Kapoor, R.A. Turi, D. Xu, and R.S. Bailey, “MNOS Memory Technology with Oxynitride Thin Films”, IEEE - Transactions on Components, Packaging and Manufacturing Technology,” 17(3), 367 (1994).
 
5. M. Shokrani and V.J. Kapoor, “InGaAs Switch Transistors for Phase Shifter Circuits”, IEEE - Transactions on Microwave Theory and Techniques, 42(5), 772 (1994).
 
6. S. Subramanyam, V.J. Kapoor, C.M. Chorey, and K.B. Bhasin, “Processing Properties of   Sputtered Superconducting Thin Films”, IEEE Transactions on Applied      Superconductivity, 3(1), 1749 (1993).
 
7. G.A. Johnson and V.J. Kapoor, “InGaAs Field-Effect Transistors with Submicron Gates for   K-Band Applications” IEEE-Transactions on Microwave Theory and Techniques, 40(3), 429 (1992).
 
8. V.J. Kapoor, D. Xu, R.S. Bailey, and R.A. Turi, “The Combined Effects of Hydrogen and Oxygen Impurities in the Silicon Nitride Film of MNOS Devices”, Journal of Electrochemical Society, 139(3), 915 (1992).
 
9. G. Subramanyam, V.J. Kapoor, C.M. Chorey, and K.B. Bhasin, “Electrical-Transport Properties and Microwave Device-Performance of Sputtered TICaBaCuO Superconducting Thin Films”, Journal of Applied Physics, 72(6), 2396 (1992).
 
10. G.A. Johnson, V.J. Kapoor, M. Shokrani, L.J. Messick, R. Nguyen, R.A. Stall, and M.A. McKee, “Indium Gallium Arsenide Microwave Power Transistors”, IEEE Transactions on Microwave Theory and Techniques, 39(7), 1069 (1991).
 
11. M.D. Biedenbender, V.J. Kapoor, K.A. Shalkhauser, L.J. Messick, R. Nguyen, D. Schmitz, and H. Jurgensen, “A Submicron Gate Indium Phosphide Power MISFET with Improved Output Power Density at 18 and 20 GHz”, IEEE Transactions on Microwave Theory and Techniques, 39(8), 1368 (1991).
 
12. M. Shokrani and V.J. Kapoor, “Silicon Dioxide with a Silicon Interfacial Layer as an Insulating Gate for Highly Stable Indium Phosphide MISFETs”, Journal of the Electrochemical Society, 138(6), 1788 (1991).
 
13. G.A. Johnson and V.J. Kapoor, “Plasma Deposited Gemanium Nitride Gate Insulators For   Indium Phosphide MISFETs”, Journal of Applied Physics, 69(6), 3636 (1991).
 
14. D. Xu and V.J. Kapoor, “Effects of Oxygen Content and Oxide Layer Thickness on Interface State Densities For Metal-Oxynitride-Silicon Devices”, Journal of Applied Physics, 70(3), 1570 (1991).
 
15. M.D. Biedenbender and V.J. Kapoor, “Chemical Nature of Interface and Encapsulated Rapid Thermal Annealing for InP MISFETs”, Journal of the Electrochemical Society, 137(5), 1537 (1990).
 
16. V.J. Kapoor, R.S. Bailey, and R.A. Turi, “Chemical Composition, Charge Trapping and Memory of Oxynitride Films for MNOS Devices”, Journal of the Electrochemical Society, 137(11), 3589 (1990).
 
17. G. Subramanyam, F. Radpour, and V.J. Kapoor, “Fabrication of TI-Ca-Ba-Cu-O Superconducting Thin Films on LaA103 Substrates”, Applied Physics Letters, 56(18), 1799 (1990).
 
18. G. Subramanyam, F. Radpour, and V.J. Kapoor, “Fabrication and Chemical Composition     of Magnetion Sputtered Ti-Ca-Ba-Cu-O High Tc Superconducting Thin Films”, Journal of Applied Physics, 68(3) 1157 (1990).
 
19. D. Xu and V.J. Kapoor, “Interface State Densities for Metal-Nitride-Oxide-Silicon (MNOS) Devices”, Journal of Applied Physics, 68(8), 4172 (1990).
 
20. M.D. Biedenbender, V.J. Kapoor, L. Messick, and R. Bguyen, “Ion Implanted High Microwave Power Indium Phosphide Transistors”, IEEE Transactions on Microwave Theory and Techniques, 37-9, 1321 (1989).
 
21. A.B. Hoofring and V.J. Kapoor, “Submicron Nickel-Oxide-Gold Tunnel Diode Detectors for Rectennas”, Journal of Applied Physics, 66-1, 430 (1989).
 
22. G.J. Valco, V.J. Kapoor, M.D. Biedenbender and W.D. Williams, “Plasma Deposited Silicon Nitride for Indium Phosphide Encapsulation”, Journal of the Electrochemical Society, 136, 175 (1989).
 
23. D. Xu and V.J. Kapoor, “Photoionization Cross-Section of Electron Traps in Thin Oxynitride Films of Metal-Oxynitride-Oxide-Silicon Devices”, Journal of Applied Physics, 65(3), 1217 (1989).
 
24. G.J. Valco and V.J. Kapoor, “Plasma Deposited Silicon Nitride for Gallium Arsenide Encapsulation”, Journal of the Electrochemical Society, 134(2), 820 (1987).
 
25. M.D. Biedenbender, V.J. Kapoor and W.D. Williams, “Rapid Thermal Annealing of Indium Phosphide Compound Semiconductors,” Journal of Vacuum Science and Technology, A5 (4), 1437 (1987).
 
26. V.J. Kapoor, M.J. Mirtich and B.A. Banks, “Diamond-like Carbon Films on Semiconductors for Insulated-Gate Technology”, Journal of Vacuum Science and Technology, A4 (3), 1013 (1986).
 
27. P.V. Koeppe, V.J. Kapoor, M.J. Mirtich, B.A. Banks and D.A. Gulino, “Ion Beam Deposited Diamondlike Carbon Coating on Semiconductor”, Journal of Vacuum Science and Technology, A3(6), 2327 (1985).
 
28. G.J. Valco and V.J. Kapoor, “Role of GaAs Surface Cleaning in Plasma Deposition of Silicon Nitride Films for Encapsulated Annealing”, Journal of Vacuum Science and Technology, A3(3), 1020 (1985).
 
29. V.J. Kapoor, G.J. Valco, G.G. Skebe, and J.C. Evan, “High Voltage Solar Cell Chip”, Journal of Applied Physics, 57-4, 1343 (1985).
 
30. S.B. Bibyk and V.J. Kapoor, “Trapping Kinetics in High Density Silicon Nitride Insulators”, Journal of Applied Physics, 56(A), 1070 (1984).
 
31. V.J. Kapoor, R.S. Bailey and H.J. Stein, “Hydrogen and Silicon Related Memory Traps in Thin Silicon Nitride Films”, Journal of Vacuum Science and Technology, A1(2), 600 (1983).
 
32. G.J. Valco and V.J. Kapoor, “Planar Multijunction High Voltage Solar Cell Chip”, Journal of Applied Physics, 58, November 1982.
 
33. V.J. Kapoor and J.P. Delatore, “Effects of Oxide Thickness of Charge Trapping in Metal-Nitride-Semiconductor Structures”, Journal of Applied Physics, 53, 5079 (1982).
 
34. R.S. Bailey and V.J. Kapoor, “Variation in the Stoichiometry of Thin Silicon Nitride Insulating Films on Silicon and its Correlative with Memory Traps”, Journal of Vacuum Science and Technology, 20, 484 (1982).
 
35. S.B. Bibyk and V.J. Kapoor, “Photoionization Cross Section of Electron Traps in Silicon Nitride Films”, Journal of Applied Physics, 52, 7313 (1981).
 
36. V.J. Kapoor, R.S. Bailey and S.R. Smith, “Impurities-Related Traps in Silicon Nitride Thin Films”, Journal of Vacuum Science and Technology, 18, 305 (1981).
 
37. V.J. Kapoor and S.B. Bibyk, “Energy Distribution of Electron Trapping Centers in LPCVD Silicon Nitride Films”, Thin Solid Films, 78, 193 (1981).
 
38. V.J. Kapoor and R.A. Turi, “Charge Storage and Distribution in the Nitride Layer of the MNOS Structures”, Journal of Applied Physics, 52, 311 (1981).
 
39. V.J. Kapoor, F.J. Feigl and S.R. Butler, “Low Temperature Photocurrent Spectroscopy of Localized States in SiO2 Films”, Physical Review Letters, 58, 193 (1977).
 
40. V.J. Kapoor, F.J. Feigl and S.R. Butler, “Energy and Spatial Distribution of an Electron Trapping Center in MOS Insulator”, Journal of Applied Physics, 48, 739 (1977).

 

PAPERS PUBLISHED IN REFEREED PROCEEDINGS:

1. A.J. Menezes and V.J. Kapoor, “Neurotransistor for Biomedical Nanotechnology,” Proceeding of Dielectrics in Emerging Technologies, Volume 2003-01, ISBN# 1-56677-3466, Pages 38-48 (2003).
 
2. V.J. Kapoor, A. Vijh, W.J. Levicky, R.L. Patterson, and J. E. Dickman, “Silicon Dioxide Insulating Films for Silicon-Germanium Technology,” Proceeding of the International Symposium, Volume 2003-02, ISBN# 1-56677-3474, Library of Congress Catalogue #2003100710, Pages 217-228 (2003).
 
3. V.J. Kapoor, M. Shokrani, C.H. Melkonian, and J.E. Dickman, “Indium Gallium Arsenide Transistors for Broadband Microwave Applications”, The conference proceedings of the IEEE-ISMOT ’01, 537 (June 2001).
 
4. M.A. Smith, V.J. Kapoor, R. Hickman, and J. VonHove, “Refractory Metal Ohmic Contacts to Gallium Nitride”,  III-V Nitride Materials and Processes, Proceedings volume of the Electrochemical Society 96-11, 133 (1996).
 
5. V.J. Kapoor and G. Subramanyam, “High Temperature Superconductor Based Microwave Phase Shifter Circuits”, Proceedings of the 5th International Symposium on Recent Advances in Microwave Technology, Proceeding Volume 2,  683 (1995).
 
6. R. Hickman, V.J. Kapoor, P.P. Chow, J.E. Dickman and S.A. Alterovitz, “HEMT’s for Cryogenic Power Applications”, Nondestructive Wafer Characterization for Compound Semiconductor Materials/ SOTAPOCS XXII, Proceedings volume of the Electrochemical Society, 95-6, (1995).
 
7. V.J. Kapoor and M. Shokrani, “Plasma Deposited Insulating Gate Properties for Compound Semiconductor Technology”, Silicon Nitride and Silicon Dioxide Thin Insulating Films, Proceedings volume of the Electrochemical Society, 94-16, 95 (1994).
 
8. V.J. Kapoor, M. Shokrani, and G.A. Johnson,” Insulating Gate Properties and Electron Beam Induced Damage for Stable InGaAs/InP MISFETS Technology”, Silicon Nitride and Silicon Dioxide Thin Insulating Films III, Proceedings volume of the Electrochemical Society, 94-5 (1994).
 
9. M. Shokrani and V.J. Kapoor, “Switch Transistors for Microwave Control Applications”, Conference proceedings of Indium Phosphide and Related Materials Conference IEEE Catalog #93, Library of Congress #393, (1993).
 
10. M. Shokrani and V.J. Kapoor, “InGaAs Insulated Gate Transistors for Microwave Frequency Applications”, SOTAPOCS XVIII Proceedings Volume of the Electrochemical Society, (1993).
 
11. V.J. Kapoor, “MNOS Memory Technology”, Proceedings of the 1993 Nonvolatile Memory Technology Conference, IEEE catalog #93TH0547-0, Library of Congress #93-778 37,  3 (1993).
 
12. G. Subramanyam and V.J Kapoor, “TI-Ca-Ba-Cu-O Superconducting Thin Films for Hybrid Microwave Circuits”, Low Temperature Electronics and High Temperature Superconductivity, Proceedings volume of the Electrochemical Society, NJ, (1993).
 
13. G.A. Johnson, M.D. Biedenbender, V.J. Kapoor, L.J. Messick, R. Ngugen, D. Schmitz, and H. Jurgenson, “Submicron Gate Microwave Power Transistors”, Conference proceedings on Indium Phosphide and Related Materials, IEEE Catalog #91CH2950-4, Library of Congress #90-85247, 423 (1991).
 
14. G.A. Johnson and V.J. Kapoor, “High Frequency Transistors and MOCVD Grown InGaAs/InP”, Conference proceedings on Indium Phosphide and Related Materials, IEEE Catalog #90CH2859-7, Library of Congress, #90-80596, 304 (1990).
 
15. M. Shokrani and V.J. Kapoor, “Silicon Dioxide with Silicon Interfacial Layer for Gate Dielectric in MISFETs on Indium Phosphide”, Ion Implantation and Dielectrics for Compound Semiconductors, Proceedings volume of the Electrochemical Society, NJ (1990).
 
16. M.D. Biedenbender and V.J. Kapoor, “Chemical Nature of Interface and Encapsulated Rapid Thermal Annealing for InP MISFETs”, SPIE Proceedings Volume 1144, 208 (1989).
 
17. Dan Xu and V.J. Kapoor, “Characterization of Electrical Properties of Hydrogen Rich Silicon Nitride Films for MNOS Devices”, Silicon Nitride and Silicon Dioxide Thin Insulating Films, Proceedings Volume of the Electrochemical Society, 89-7, 107 (1989).
 
18. V.J. Kapoor and R.A. Turi (Invited) “Review of Oxynitride Films for Non-Volatile Memory Device Technology”, Silicon Nitride and Silicon Dioxide Thin Insulating Films, Proceedings Volume of the Electrochemical Society, 89-7, (1989).
 
19. D.M. Pantic and V.J. Kapoor, “Electron-Beam Induced Damage in PECVD Si3N4 and SiO2 Films on InP”, Proceedings of the Electrochemical Society, Pennington, NJ 88-15, 187 (1988).
 
20. P.G. Young and V.J. Kapoor, “Silicon Nitride and Silicon Dioxide Films for MISFETs on Indium Phosphide”, Dielectric Films on Compound Semiconductors, Journal of the Electrochemical Society, Pennington, NJ 88-15, 123 (1988).
 
21. M.D. Biedenbender and V.J. Kapoor, “Rapid Thermal Annealing of Ion Implanted Phosphide”, Proceedings of the Electrochemical Society, Pennington, NJ, 88-15, 103 (1988).
 
22. G.A. Johnson and V.J. Kapoor, “Plasma Deposited Germanium Nitride on InP Compound Semiconductors”, Dielectric Films on Compound Semiconductors, Journal of the Electrochemical Society, Pennington, NJ, 88-15, 57 (1988).
 
23. D. Xu and V.J. Kapoor, “Cross-Section of Electron Traps in Thin LPCVD films”, Proceedings of the Electrochemical Society, Pennington, NJ 87-10, 168 (1987).
 
24. G.J. Valco and V.J. Kapoor, “Encapsulated Annealing of Ion-Implanted GaAs Substrates”, Silicon Nitride and Silicon Dioxide Thin Insulating Films, Proceedings of the Electrochemical Society, Pennington, NJ 87-10, 515 (1987).
 
25. G.J. Valco, M.D. Biedenbender, G.A. Johnson, V.J. Kapoor and W.D. Williams, “Encapsulated Annealing of InP Substrated”, Proceedings of the Electrochemical Society, Pennington, NJ 86-3, 209 (1986).
 
26. P.V. Koeppe and V.J. Kapoor, “Modeling of Two-Phase CCD’s with Submicron Gaps in InP Substrates”, Dielectric Films on Compound Semiconductors, Proceedings of the Electrochemical Society, Pennington, NJ 86-3, 47 (1986).
 
27. D.C. Liu, G.J. Valco, G.G. Skebe and V.J. Kapoor, “Plasma Deposited Nitride Films on GaAs and InP, Proceedings of the Electrochemical Society, Pennington, NJ 83-8, 141 (1983).
 
28. S.B. Bibyk and V.J. Kapoor, “Trapping Kinetics in Insulators Having a High Charge Capture Probability”, Proceedings of the Electrochemical Society, Pennington, NJ 83-8, 241 (1983).
 
29. G.J. Valco and V.J. Kapoor, “Plasma Deposition of Silicon Nitride Films for Encapsulated Annealing of Implanted GaAs”, Silicon Nitride Thin Insulating Films, Proceedings of the Electrochemical Society, Pennington, NJ 83-8, 128 (1983).
 
30. G.J. Valco and V.J. Kapoor, “Multijunction High Voltage Concentrator Solar Cells”, Proceedings of the Intersociety Energy Conversion Engineering, 2, 1649 (1981).
 
31. G.J. Valco, V.J. Kapoor and A. Chai, “Fabrication of Multijunction High Voltage Concentrator Solar Cells by Integrated Circuit Technology, Proceedings of the Fifteenth IEEE Photovoltaic Specialist, 15, 187 (1981).
 
32. V.J. Kapoor and S.B. Bibyk, “Spatial and Energy Distribution of Electric Trapping Defects in the Thick-Oxide MNOS Structure”, The Physics of MOS Insulators, edited by S.T. Pantelides, Pergammon Press, New York, NY (1980).
 
33. F.J. Feigl, D.J. DiMaria and V.J. Kapoor, “Photodepopulation Spectroscopy in MIS Insulators”, Thermal and Photostimulated Currents in Insulators, Proceedings Volume, ECS, 76, 35 (1976).
 
34. V.J. Kapoor, F.J. Feigl and S.R. Butler, “Energy and Spatial Distribution of Electron Trapping Devices in the MNOS Insulator”, Thermal and Photostimulated Currents in Insulators, Proceedings Volume ECS, 76, 35, (1976).

 

Conference PublicationS: (partial listing)

 

1. Y.J. Chen, R. Rogers and V.J. Kapoor, “Information Transfer Between Pulmonary Stretch Receptors and Pump Cells in the Respiratory Control System,” Interface, Volume 12, No. 3, PS-10 (2003).
 
2. V.J. Kapoor, A. Menezes, A. Vijh, and R. Patterson, “Analog Power and Digital Circuits at Cryogenic Temperatures,” Interface, Volume 12, No. 3, PS-49 (2003).
 
3. A. Menezes and V.J. Kapoor, “Insulated Gate Field Effect Transistors For Cell Culture Media,” Interface, Volume 12, No. 3, PS-25 (2003).
 
4. V.J. Kapoor, A. Vijh, W.J. Levicky, R.L. Patterson, and J.E. Dickman, “Silicon Dioxide Insulating Films for Silicon-Germanium Technology,” The Electrochemical Society Technical Conference, Paris, France, April 25-29 (2003).
 
5. A.J. Menezes, V.J. Kapoor, L. Smith, M. Komisarek, R. Oberst, and S.C. Molitor, “Neuroelectronic MEMS,” Proceedings of the 201st meeting of the Electrochemical Society, Philadelphia, PA, May 12-17 (2002).
 
6. A. Vijh and V.J. Kapoor, “P- and n-channel SiGe MOSFETs for Space Systems,” Proceedings of the 201st meeting of the Electrochemical Society, Philadelphia, PA, May 12 (2002).
 
7. C.H. Melkonian, D. Bernardon, V.J. Kapoor, J.E. Dickman, and R.L. Patterson, “Compound Semiconductor Devices for Space-Borne Power Electronic Systems”, The Electrochemical Society Conference, San Francisco, California, September 2-7, 2001.
 
8. C.H. Melkonian and V.J. Kapoor, “InGaAs/InP MISFET for Cryogenic DC Switching Applications”, the meeting of the Electrochemical Society, Hawaii,  October 17-22, 1999, Meeting abstracts volume 1999-1, Abstract No. 1199.
 
9. C.H. Melkonian and V.J. Kapoor, “Fabrication of an InGaAs MISFET”, the meeting of the Electrochemical Society, Seattle, Washington, May 2-6, 1999, Abstract No. 471.
 
10. M.A. Smith, M.R. Kobylak, and V.J. Kapoor, “Fabrication and Characterization of Vacuum Microelectronic Devices”, The Electrochemical Society Interface, 5(1), 1996, The Electrochemical Society Meeting, Los Angeles, California, May 5-10 (1996).
 
11. M.A. Smith and V.J. Kapoor, “An Investigation of Refractory Metal Ohmic Contacts to Gallium Nitride”, The Electrochemical Society Interface, 5(1), 1996, The Electrochemical Society Meeting, Los Angeles, California, May 5-10 (1996).
 
12. R. Hickman, V.J. Kapoor, J.E. Dickman, and S.A. Altrovitz, “Fabrication Processes for InAlAs/InP HEMT’S”, The Electrochemical Society Interface, 4(1), 172 (1995).
 
13. M.R. Kobylak, J.V. Smith, V.J. Kapoor, and V. Heinen, “Vacuum Microelectronic Diode for Space Electronics Application”, The Electrochemical Society Interface, 4(1), 172 (1995).
 
14. R. Hickman, V.J. Kapoor, P.O. Chow, J.E. Dickman, and S.A. Alterovitz, “InAlAs/InP HEMT’S for Cryogenic Power Applications”, The Electrochemical Society Interface, 4(1), 173 (1995).
 
15. V.J. Kapoor, M. Shokrani and G.A. Johnson, “Si02/Si Insulating Gate Properties and Electron-Beam Induced Damage for Stable InGaAs/InP MISFET Technology”, The Electrochemical Society Interface, 3(1), 125 (1994).
 
16. V.J. Kapoor, R. Hickman and G. Subramanyam, “Thallium-superconductor Indium Phosphide semiconductor Hybrid Phase Shifter Low Temperature Electronics at Microwave Frequencies”, presented at the First European Workshop on Low Temperature Electronics, Grenoble, France, June 29-July 1, (1994).
 
17. R. Hickman, V.J. Kapoor, P.W. Yu, “Eqitaxial Growth of InGaAs by LP-MOCVD Under Highly Stable Reaction Chamber Conditions”, The Electrochemical Society Interface, 3(3), 155 (1994).
 
18. R. Hickman and V.J. Kapoor, “High Electron Mobility Transistors Grown by LP-MOCVD with P+ InGaAs Gate Layer”, The Electrochemical Society Meeting, New Orleans, Louisiana, October 10-15, (1993).
 
19. W.S. Gaines and V.J. Kapoor, “InAlAs/InGaAs High Electron Mobility Transistor for MMIC Applications”, The Electrochemical Society Meeting, New Orleans, Louisiana, October 10-15, (1993).
 
20. Shokrani and V.J. Kapoor, “InGaAs Switch Transistors for Microwave Control Applications”, Fifth International Conference on Indium Phosphide and Related Materials, Paris France, April 18-22, (1993).
 
21. G. Subramanyam and V.J. Kapoor, “TICaBaCuO Superconducting Thin Films for Hybrid Microwave Phase Shifter Circuits”, The 183rd Meeting of the Electrochemical Society, Honolulu, Hawaii, May 16-21, (1993).
 
22. K.B. Bhasin, S.S. Toncich, R.R. Romanofsky, C.M. Chorey, N. Roher, G. Valco, and V.J.   Kapoor, “High Tc Superconducting/Semiconducting Hybrid Microwave Circuits and Applications”, The Electrochemical Society Meeting, Honolulu, Hawaii, May 16-21, (1993).
 
23. M. Shokrani and V.J. Kapoor, “InGaAs Insulated Gate Transistors for Microwave Frequency Applications”, The Electrochemical Society Interface, 285 (1993).
 
24. G. Subramanyam, V.J. Kapoor, C.M. Chorey, and K.B. Bhasin, “Microwave Properties of Sputtered Superconducting Thin Films”, Applied Superconductivity Conference, Chicago, Illinois, August 23-28, (1992).
 
25. J.J. Nahra, K.B. Bhasin, G. Subramanyam, S.S. Toncich, and V.J. Kapoor, “C-Band Superconductor-Semiconductor Hybrid Field-Effect Transistor Amplifier”, Applied Superconductivity Conference, Chicago, Illinois, August 23-28, (1992).
 
26. G.A. Johnson and V.J. Kapoor, “Indium Gallium Arsenide Microwave Power Transistors”,     1991 IEEE-MTT International Microwave Symposium, Boston, Massachusetts, June 10-14, 1991.  This paper was awarded the First Prize in the IEEE conference for the student paper competition (Greg Johnson - Ph.D. student).
 
27. G.A. Johnson, M.D. Biedenbender, V.J. Kapoor. L.J. Messick, R. Nguyen, D. Schmitz, and H. Jurgensen, “InGaAs/InP Submicron Gate Microwave Power Transistors for 20 GHz Applications”, Third International Conference on Indium Phosphide and Related Materials, Cardiff, Wales, UK, April 8-11, 1991, sponsored by IEEE Electron Devices/Laser Societies.
 
28. G. Subramanyam, V.J. Kapoor and G.H. Lemon, “Processing of TICaBa CuO Superconducting Thin Films for Passive Microwave Devices”, The Journal of the Electrochemical Society, 138(4), 222C (1991).
 
29. G.A. Johnson and V.J. Kapoor, “Microwave Power Indium Gallium Arsenide Transistors”,     Bull. Am. Phy. Soc., 36(3), 985 (1991).
 
30. M.D. Biedenbender and V.J. Kapoor, “High Microwave Output Power Density Submicron Gate InP Transistors”, Bull. Am. Phy. Soc., 36(3), 987 (1991).
 
31. M. Shokrani and V.J. Kapoor, “Role of Thin Silicon Interfacial Layer on the Chemical and the Electrical Properties of the Silicon Dioxide Gate Insulators for InP Power MISFETs”, Bull. Am. Phy. Soc., 36(3), 986 (1991).
 
32. G. Subramanyam and V.J. Kapoor, “Processing of High Tc and High Jc Superconducting    Films”, Bull. Am. Phy. Soc., 36(3), 519 (1991).
 
33. F. Radpour, G. Subramanyam and V.J. Kapoor, “Fabrication and Characterization of TI-Ca-Ba-Cu-O Superconducting Thin Films on SrTiO3  and LaAlO3  Substrates”, 177th Meeting of the Electrochemical Society, Montreal, Canada, April 16-20, (1990).
 
34. G.A. Johnson and V.J. Kapoor, “High Frequency Submicron Transistors on MOCVD Grown In GaAs/InP”, Second International Conference on Indium Phosphide and Related Materials, April 23-25, 1990, Denver, Colorado.
 
35. D. Xu and V.J. Kapoor, “The Effects of Hydrogen Impurity on Thin Silicon Nitride Films on MNOS Devices”, Journal of the Electrochemical Society, 137(8), 391C (1990).
 
36. M. Shokrani, M.D. Biedenbender, V.J. Kapoor, and F. Radpour, “High Microwave Power InP MISFETs with One Micron and Submicron Gates”, Second International Conference on Indium Phosphide and Related Materials, April 23-25, 1990, Denver, Colorado.
 
37. G. Subramanyam, F. Radpour, V.J. Kapoor, and G.H. Lemon, “Disposition and Patterning   of Thallium Superconducting Thin Films”, SPIE Technical Symposium on Optical Engineering and Photonics, Orlando, Florida, April 16-20, (1990).
 
38. G. Subramanyam, F. Radpour, V.J. Kapoor, and G.H. Lemon, “Magnetron Sputtered TICaBaCuo Superconducting Thin Films for Passive Microwave Devices”, SPIE Symposium on Advances in Semiconductors and Superconductors, San Diego, California,             March 17-21, (1990).
 
39. G.A. Johnson and V.J. Kapoor, “Dielectric Films on InGaAs Substrates”, 176th Meeting of the Electrochemical Society, Hollywood, CA, October 15, 1989, J. Chem. Society, 136(8), 385 C (1989).
 
40. M. Shokrani and V.J. Kapoor, “Gate Dielectric with Silicon Interfacial Layer on Indium Phosphide”, The Journal of the Electrochemical Society, 136(8), 385 C (1989).
 
41. M.D. Biedenbender and V.J. Kapoor, “Self Aligned Gate Technology for InP MISFETs”, First International Conference on Indium Phosphide for Advanced Electronic and Optical Devices, Norman, OK, March 25, 1989.
 
42. V.J. Kapoor, M.D. Biedenbender and G.A. Johnson, “Encapsulated Rapid Thermal Annealing and Thin Gate Dielectrics for InP MISFETs”, InP Microwave/Millimeter Wave Technology Workshop, NOSC, San Diego, CA, January 25-26, 1989.
 
43. A.B. Hoofring and V.J. Kapoor, “Fabrication and Characterization of Far Infrared Submicron Rectenna Devices”, The Journal of the Electrochemical Society, 135(8), 377C (1988).
 
44. D. Xu and V.J. Kapoor, “Characterization of Electrical Properties of Oxygen/Hydrogen Rich Silicon Nitride Films for MNOS Devices”, The Journal of the Electrochemical Society, 135(8), 361C (1988).
 
45. V.J. Kapoor, M.D. Biedenbender and P.G. Young, “Rapid Thermal Annealing and Self Aligned Gate Processing for Ion Implanted Indium Phosphide MISFETs”, 1988 International Electronic Devices and Materials Symposium, Kaohsuing, Taiwan, August 29-31, 1988.
 
46. D.M. Pantic, W.D. Williams, J.E. Dickman, P.G. Young, M.D. Biedenbender, and V.J. Kapoor, “Electron Beam Induced Damage in Silicon Nitride Films on InP”, 172nd Meeting of the Electrochemical Society, Honolulu, Hawaii, October 18-23, 1987.
 
47. P. Young, V.J. Kapoor and W.D. Williams, “Silicon Nitride and Silicon Dioxide Films for MISFETs on Indium Phosphide”, 172nd Meeting of the Electrochemical Society, Honolulu, Hawaii, October 18-23, 1987.
 
48. M.D. Biedenbender, V.J. Kapoor, D. Xu, and W.D. Williams, “Rapid Thermal Annealing of Ion Implanted Indium Phosphide”, 172nd Meeting of the Electrochemical Society, Honolulu, Hawaii, October 18-23, 1987.
 
49. G.A. Johnson, V.J. Kapoor and P.G. Young, “Plasma Deposited Germanium Nitride for Indium Phosphide”, 172nd Meeting of the Electrochemical Society, Honolulu, Hawaii, October 18-23, 1987.
 
50. D. Xu and V.J. Kapoor, “Photoionization Cross-Section of Thin LPCVD Oxynitride Films in MNOS Structures”, The Electrochemical Society Meeting, San Diego, CA, October 19-24, 1986.
 
51. M.D. Biedenbender, V.J. Kapoor and W.D. Williams, “Rapid Thermal Annealing of Indium Phosphide Compound Semiconductors”, 33rd National Symposium of the American Vacuum Society, Baltimore, MD, October 27-31, 1986.
 
52. G.A. Johnson, V.J. Kapoor and D.A. Gulino, “Plasma Deposited Germanium Nitride on InP Compound Semiconductor”, 33rd National Symposium of the American Vacuum Society, Baltimore, MD, October 17-31, 1986.
 
53. W.D. Williams, J.E. Dickman, J. Warner, G. Warner, G.J. Valco, and V.J. Kapoor, “Electron Beam Induced Damage in GaAs”, Third North Coast Symposium of American Vacuum Society, Ohio Chapter, June 2, 1986.
 
54. M.D. Biedenbender and V.J. Kapoor, “Surface Characterization for Capless Rapid Thermal Annealing of Ion Implanted Indium Phosphide”, Workshop on Dielectric Systems for Compound Semiconductors, San Diego, Ca, June 17-18, 1986.
 
55. V.J. Kapoor, M.J. Mirtich and B.A. Banks, “Diamondlike Carbon Films on Compound Semiconductors for Insulated-Gate Technology”, 32nd National American Vacuum Society Symposium, Houston, TX, November 19-22, 1985.
 
56. G.J. Valco and V.J. Kapoor, “InP MISFETs with Ge3N4/BN Gate Insulators”, J. Electrochemical Society, 132, 349C (1985).
 
57. P.V. Koeppe and V.J. Kapoor, “Modeling of Two-Phase CCDs with Various Gate Dielectrics on InP Substrates”, J. Electrochemical Society, 132, 348C (1985).
 
58. T. Burnett, W.D. Williams, J.E. Dickman, G.J. Valco, and V.J. Kapoor, “Electron Beam Induced Damage in Semiconductors” North Coast Symposium of the American Vacuum Society, Ohio Chapter, June 3-3, 1985.
 
59. V.J. Kapoor, J.L. Eismann, J.A. Topich, and R.A. Turi, “Effects on Oxygen on Charge Trapping in LPCVD Silicon Nitride Insulator of an MNOS Device”, J. Electrochemical Society, 132, 97C (1985).
 
60. V.J. Kapoor, P.V. Koeppe, M.J. Mirtich, B.A. Banks, and D.A. Gulino, “Characterization of Ion Beam Deposited Diamondlike Carbon Coating on Semiconductors”, International Conference on Metallurgical Coating, Los Angeles, CA, April 15-19, 1985.
 
61. V.J. Kapoor, J.L. Eismann, J.A. Topich, and R.A. Turi, “Role of Electron and Hole Traps on the Memory Properties of MNOS Devices”, 7th IEEE Nonvolatile Semiconductor Memory Workshop, San Diego, CA, March 11-13, 1985.
 
62. G.J. Valco and V.J. Kapoor, “Role of GaAs Surface Cleaning of Encapsulated Annealing”, 31st National American Vacuum Society Symposium, Reno, NV, December 9-12, 1984.
 
63. V.J. Kapoor and G.J. Valco, “Silicon Nitride for Annealing GaAs: Part II”, The Electrochemical Society Meeting, New Orleans, LA, October 8-12, 1984.
 
64. G.J. Valco, V.J. Kapoor and J.E. Dickman, “Plasma Reactor Cleaning and Plasma Damage in GaAs, Part I”, The Electrochemical Society Meeting, New Orleans, LA, October 8-12, 1984.
 
65. R.S. Bailey, V.J. Kapoor, and J.A. Topich, “The Effects of LPCVD Silicon Nitride Composition on the Memory Properties of MNOS Structures”, 1983 Nonvolatile Semiconductor Memory Workshop, Vail, CO, August 17, 1983.
 
66. D.C. Liu and V.J. Kapoor, “Plasma Deposited Nitride Films on GaAs and InP”, The Electrochemical Society Meeting, San Francisco, CA, May 9-13, 1983.
 
67. G.J. Valco and V.J. Kapoor, “Plasma Deposition of Silicon Nitride and Boron Nitride Films for Encapsulated Annealing of Implanted GaAs”, The Electrochemical Society Meeting, 1303), 78C (1983); San Francisco, CA, May 9-18, 1983.
 
68. S.B. Bibyk and V.J. Kapoor, “Trapping Kinetics in Insulators Having a High Charge Capture Probability”, The Electrochemical Society Meeting, San Francisco, CA, May 9-18, 1983.
 
69. D.C. Liu and V.J. Kapoor, “Passivation of GaAs with Boron Nitride”, IEEE Workshop on Dielectric System for III-V Compounds, San Diego, CA, June, 1982.
 
70. R.G. Byrnes and V.J. Kapoor, “Finite Element Modeling of Submicron Geometry Charge-Coupled Devices”, Joing SIAM and IEEE Conference on Numerical Simulation of VLSI Devices, Boston, Mass., November 2-4, 1982.
 
71. V.J. Kapoor and R.S. Bailey, “Hydrogen Related Memory Traps in Nitride Films”, 29th National Vacuum Symposium, Baltimore, Maryland, November 16-19, 1982.
 
72. G.J. Valco and V.J. Kapoor, “PMJ Solar Cell Chips”, Bull. Amer. Phys. Society Meeting, April, 1982.
 
73. R.J. Meara and V.J. Kapoor, “Minority Carrier Lifetime Studies in PMJ Solar Cell Chips”, Am. Phys. Society., 27, 462 (1982).
 
74. G.M. West, C.F. Kilb and V.J. Kapoor, “Fabrication of a Single Level Polysilicon Gate CDD with Submicron Inter-electrode Gaps”, J. Electrochemical Society, 129, 330C (1982).
 
75. R.G. Byrnes and V.J. Kapoor, “Finite Element Modeling of Submicron Geometry Charge-Coupled Devices” Bull. Amer. Phys. Society, 27, 461 (1982).
 
76. V.J. Kapoor and J.P. Delatore, “Trapped Charge Density in Silicon Nitride Films vs. Silicon Dioxide Thickness”, Bull. Amer. Phys. Society, (April, 1982).
 
77. V.J. Kapoor and H.J. Stein, “Origin of Electron Traps in CVD Silicon Nitride Films”, 1982 Nonvolatile Semiconductor Memory Workshop, Monterey, CA, March 7, 1982.
 
78. G.J. Valco and V.J. Kapoor, “High Voltage Concentrator Solar Cells”, Bull. Amer. Phys. Society Meeting, Baltimore, MD, April 20-23, 1981.
 
79. R.G. Byrnes and V.J. Kapoor, “Modeling of Submicron Charge-Coupled Devices”, Bull. Amer. Phys. Society, 26, 618 (1981).
 
80. H.J. Stein and V.J. Kapoor, “Electron Trap Densities and Chemical Composition of APCVD Silicon Nitride”, The Electrochemical Society, 160th Meeting, Denver, CO, October 11-16, 1981.
 
81. R.S. Bailey and V.J. Kapoor, “Analysis of MNOS Structures by AES”, The Electrochemical Society, 160th Meeting, Denver, CO, October 11-16, 1981.
 
82. S.B. Bibyk, V.J. Kapoor, and R.A. Turi, “Optically Programmable Nonvolatile MNOS Memory Devices”, Digest of Technical Papers of the CECON Electronics Conferences, Cleveland, OH, May 1980 (IEEE, New York).
 
83. Salmi, V.J. Kapoor, G.M. West, and D. Jones, “Dark Current Nonuniformity of ImagingCharge-Coupled Devices”, Digest of Technical Papers of the 26th CECON Electronic Conference, Cleveland, OH, May 1980 (IEEE, New York).
 
84. V.J. Kapoor and R.S. Bailey, “Chemical Nature of Si3N4 Films”, 27th National American Vacuum Society Symposium, October 14-17, 1980.
 
85. V.J. Kapoor, “Energy Distribution of Trapping Defects in the Silicon Nitride Insulator”, J. Electrochemical Society, 127, 377 (1980).
 
86. S.B. Bibly and V.J. Kapoor, “Photocurrent Spectroscopy on the Thick-Oxide MNOS Devices”, Bull. Amer. Phys. Society, 25, 313 (1980).
 
87. V.J. Kapoor and S.B. Bibyk, “Spatial and Energy Distribution of Electron Trapping Defects in the Thick-Oxide MNOS Structure”, International Tropical Conference on the Physics of MOS Insulators, Raleigh, NC, June 1980.
 
88. R.S. Bailey, S.R. Smith and V.J. Kapoor, “Auger Depth Profiling of Thick-Oxide MNOS Devices”, Bull. Amer. Phys. Society, 25, (March 1980).
 
89. V.J. Kapoor and W. Morris, “Electronic Charge Trapping in Thick Oxide MNOS Devices”, Bull. Amer. Phys. Society, 25, 313 (1980).
 
90. A.V. Kordesh, V.J. Kapoor and W.H. Ko, “Energy Distribution in Memory Traps in the MNOS Structures”, Bull. Amer. Phys. Society, 24, 496 (1979).
 
91. G.J. Valco and V.J. Kapoor, “Carrier Generation in Charge-Coupled Devices in the Dark”, Bull. Amer. Phys. Society, 24, (March 1979).
 
92. V.J. Kapoor, R.A. Turi and W.H. Ko, “Charge Storage in the Nitride Layer of a Biased MNOS Device”, Bull. Amer. Phys. Society, 24, 496 (1979).
 
93. V.J. Kapoor, “Electronic Charge Trapping in MNOS Structure”, Bull. Amer. Phys. Society, 22, 407 (1977).
 
94. V.J. Kapoor, “Low Temperature Photocurrent Spectroscopy on the MOS Oxide”, Bull. Amer. Phys. Society, 21, 589 (1976).
 
95. V.J. Kapoor and F.J. Feigi, “Photocurrent Spectroscopy on the MOS Insulator”, Bull. Amer. Phys. Society, 21, 1315 (1976).
 
96. V.J. Kapoor and F.J. Feigi, “Photodepopulation Spectroscopy in MIS Insulator”, Journal of the Electrochemical Society, 122, 232C (1975).
 
97. V.J. Kapoor, F.J. Feigl and S.R. Butler, “Spatial Distribution of Electron Trapping in MOS”, Journal of the Electrochemical Society, 122, 250C (1975).